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{"_buckets": {"deposit": "afa57f9a-6ae5-49df-8ed1-8e614e40061c"}, "_deposit": {"created_by": 3, "id": "3105", "owners": [3], "pid": {"revision_id": 0, "type": "depid", "value": "3105"}, "status": "published"}, "_oai": {"id": "oai:toyama.repo.nii.ac.jp:00003105", "sets": ["558"]}, "author_link": ["10306", "10308", "10309", "10304", "10315", "10305", "10310", "10311", "10312", "10316", "10307"], "item_2_alternative_title_19": {"attribute_name": "その他(別言語等)のタイトル", "attribute_value_mlt": [{"subitem_alternative_title": "3D Micro-Fabrication using Combination Technique of Nano-scale Processing and Chemical Etching : 4th Report, Mechanism of Masking Effect"}]}, "item_2_biblio_info_7": {"attribute_name": "書誌情報", "attribute_value_mlt": [{"bibliographicIssueDates": {"bibliographicIssueDate": "2005-06", "bibliographicIssueDateType": "Issued"}, "bibliographicIssueNumber": "706", "bibliographicPageEnd": "2040", "bibliographicPageStart": "2035", "bibliographicVolumeNumber": "71", "bibliographic_titles": [{"bibliographic_title": "日本機械学會論文集. C編 = Transactions of the Japan Society of Mechanical Engineers. C"}]}]}, "item_2_description_15": {"attribute_name": "フォーマット", "attribute_value_mlt": [{"subitem_description": "application/pdf", "subitem_description_type": "Other"}]}, "item_2_description_4": {"attribute_name": "抄録", "attribute_value_mlt": [{"subitem_description": "This study is intended to fabricate 3D microstructures on single crystal silicon by tribo-nano-lithography(TNL) and wet chemical etching. The processed area of single crystal silicon by diamond tip withstands etching in KOH solution, and consequently protruding microstructure can be fabricated. Transmission electron microscope(TEM), Auger electron spectroscopy(AES) and secondary ion mass spectrometry(SIMS) analyses are utilized to study the mechanism of masking effect. As a result, it can be known that crystal silicon structures are converted to amorphous silicon by TNL process, resulting in acting to the etch mask against KOH solution. Comparison of etch rate between amorphous and single crystal silicon is conducted. In addition, mechanism of protuberance, which is generated in processing under lower normal load, is studied with minute observation of processed area.", "subitem_description_type": "Abstract"}]}, "item_2_description_40": {"attribute_name": "資源タイプ(DSpace)", "attribute_value_mlt": [{"subitem_description": "Article", "subitem_description_type": "Other"}]}, "item_2_full_name_3": {"attribute_name": "著者別名", "attribute_value_mlt": [{"nameIdentifiers": [{"nameIdentifier": "10311", "nameIdentifierScheme": "WEKO"}], "names": [{"name": "Kawasegi, Noritaka"}]}, {"nameIdentifiers": [{"nameIdentifier": "10312", "nameIdentifierScheme": "WEKO"}], "names": [{"name": "Morita, Noboru"}]}, {"nameIdentifiers": [{"nameIdentifier": "10308", "nameIdentifierScheme": "WEKO"}, {"nameIdentifier": "00174714 ", "nameIdentifierScheme": "e-Rad", "nameIdentifierURI": "https://nrid.nii.ac.jp/nrid/1000000174714 "}], "names": [{"name": "Yamada, Shigeru"}]}, {"nameIdentifiers": [{"nameIdentifier": "10304", "nameIdentifierScheme": "WEKO"}, {"nameIdentifier": "1000060251881", "nameIdentifierScheme": "CiNii ID", "nameIdentifierURI": "http://ci.nii.ac.jp/nrid/1000060251881"}, {"nameIdentifier": "60251881", "nameIdentifierScheme": "NRID", "nameIdentifierURI": " "}], "names": [{"name": "Takano, Noboru"}]}, {"nameIdentifiers": [{"nameIdentifier": "10315", "nameIdentifierScheme": "WEKO"}], "names": [{"name": "Oyama, Tatsuo"}]}, {"nameIdentifiers": [{"nameIdentifier": "10316", "nameIdentifierScheme": "WEKO"}], "names": [{"name": "Ashida, Kiwamu"}]}]}, "item_2_publisher_33": {"attribute_name": "出版者", "attribute_value_mlt": [{"subitem_publisher": "社団法人日本機械学会"}]}, "item_2_rights_13": {"attribute_name": "権利", "attribute_value_mlt": [{"subitem_rights": "rights: 本文データは社団法人日本機械学会の許諾に基づきCiNiiから複製したものである"}]}, "item_2_source_id_10": {"attribute_name": "書誌レコードID", "attribute_value_mlt": [{"subitem_source_identifier": "AN00187463", "subitem_source_identifier_type": "NCID"}]}, "item_2_source_id_8": {"attribute_name": "ISSN", "attribute_value_mlt": [{"subitem_source_identifier": "03875024", "subitem_source_identifier_type": "ISSN"}]}, "item_2_version_type_16": {"attribute_name": "著者版フラグ", "attribute_value_mlt": [{"subitem_version_resource": "http://purl.org/coar/version/c_970fb48d4fbd8a85", "subitem_version_type": "VoR"}]}, "item_creator": {"attribute_name": "著者", "attribute_type": "creator", "attribute_value_mlt": [{"creatorNames": [{"creatorName": "高野, 登"}], "nameIdentifiers": [{"nameIdentifier": "10304", "nameIdentifierScheme": "WEKO"}, {"nameIdentifier": "1000060251881", "nameIdentifierScheme": "CiNii ID", "nameIdentifierURI": "http://ci.nii.ac.jp/nrid/1000060251881"}, {"nameIdentifier": "60251881", "nameIdentifierScheme": "NRID", "nameIdentifierURI": " "}]}, {"creatorNames": [{"creatorName": "大山, 達雄"}], "nameIdentifiers": [{"nameIdentifier": "10305", "nameIdentifierScheme": "WEKO"}]}, {"creatorNames": [{"creatorName": "川堰, 宣隆"}], "nameIdentifiers": [{"nameIdentifier": "10306", "nameIdentifierScheme": "WEKO"}]}, {"creatorNames": [{"creatorName": "森田, 昇"}], "nameIdentifiers": [{"nameIdentifier": "10307", "nameIdentifierScheme": "WEKO"}]}, {"creatorNames": [{"creatorName": "山田, 茂"}], "nameIdentifiers": [{"nameIdentifier": "10308", "nameIdentifierScheme": "WEKO"}, {"nameIdentifier": "00174714 ", "nameIdentifierScheme": "e-Rad", "nameIdentifierURI": "https://nrid.nii.ac.jp/nrid/1000000174714 "}]}, {"creatorNames": [{"creatorName": "芦田, 極"}], "nameIdentifiers": [{"nameIdentifier": "10309", "nameIdentifierScheme": "WEKO"}]}, {"creatorNames": [{"creatorName": "PARK, Jeong Woo"}], "nameIdentifiers": [{"nameIdentifier": "10310", "nameIdentifierScheme": "WEKO"}]}]}, "item_files": {"attribute_name": "ファイル情報", "attribute_type": "file", "attribute_value_mlt": [{"accessrole": "open_date", "date": [{"dateType": "Available", "dateValue": "2016-02-16"}], "displaytype": "detail", "download_preview_message": "", "file_order": 0, "filename": "機械論文C05-2035.pdf", "filesize": [{"value": "1.0 MB"}], "format": "application/pdf", "future_date_message": "", "is_thumbnail": false, "licensetype": "license_free", "mimetype": "application/pdf", "size": 1000000.0, "url": {"label": "機械論文C05-2035.pdf", "url": "https://toyama.repo.nii.ac.jp/record/3105/files/機械論文C05-2035.pdf"}, "version_id": "ef56d139-1f4a-4fec-8869-18454e34b108"}]}, "item_keyword": {"attribute_name": "キーワード", "attribute_value_mlt": [{"subitem_subject": "Tribo-Nanolithography", "subitem_subject_scheme": "Other"}, {"subitem_subject": "3D Micro-fabrication", "subitem_subject_scheme": "Other"}, {"subitem_subject": "Friction Force Microscope", "subitem_subject_scheme": "Other"}, {"subitem_subject": "Single Crystal Silicon", "subitem_subject_scheme": "Other"}, {"subitem_subject": "Amorphous", "subitem_subject_scheme": "Other"}, {"subitem_subject": "KOH", "subitem_subject_scheme": "Other"}, {"subitem_subject": "Cantilever for Processing", "subitem_subject_scheme": "Other"}]}, "item_language": {"attribute_name": "言語", "attribute_value_mlt": [{"subitem_language": "jpn"}]}, "item_resource_type": {"attribute_name": "資源タイプ", "attribute_value_mlt": [{"resourcetype": "journal article", "resourceuri": "http://purl.org/coar/resource_type/c_6501"}]}, "item_title": "ナノスケール機械加工と化学エッチングを併用した3次元極微細構造形成 : 第4報,マスキング作用のメカニズム(機械要素,潤滑,工作,生産管理など)", "item_titles": {"attribute_name": "タイトル", "attribute_value_mlt": [{"subitem_title": "ナノスケール機械加工と化学エッチングを併用した3次元極微細構造形成 : 第4報,マスキング作用のメカニズム(機械要素,潤滑,工作,生産管理など)"}]}, "item_type_id": "2", "owner": "3", "path": ["558"], "permalink_uri": "http://hdl.handle.net/10110/1402", "pubdate": {"attribute_name": "公開日", "attribute_value": "2007-12-19"}, "publish_date": "2007-12-19", "publish_status": "0", "recid": "3105", "relation": {}, "relation_version_is_last": true, "title": ["ナノスケール機械加工と化学エッチングを併用した3次元極微細構造形成 : 第4報,マスキング作用のメカニズム(機械要素,潤滑,工作,生産管理など)"], "weko_shared_id": 3}
ナノスケール機械加工と化学エッチングを併用した3次元極微細構造形成 : 第4報,マスキング作用のメカニズム(機械要素,潤滑,工作,生産管理など)
http://hdl.handle.net/10110/1402
http://hdl.handle.net/10110/1402e6695b87-9353-4cf1-b86b-e15c8a5e6949
名前 / ファイル | ライセンス | アクション |
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機械論文C05-2035.pdf (1.0 MB)
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Item type | 学術雑誌論文 / Journal Article(1) | |||||
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公開日 | 2007-12-19 | |||||
タイトル | ||||||
タイトル | ナノスケール機械加工と化学エッチングを併用した3次元極微細構造形成 : 第4報,マスキング作用のメカニズム(機械要素,潤滑,工作,生産管理など) | |||||
言語 | ||||||
言語 | jpn | |||||
キーワード | ||||||
主題Scheme | Other | |||||
主題 | Tribo-Nanolithography | |||||
キーワード | ||||||
主題Scheme | Other | |||||
主題 | 3D Micro-fabrication | |||||
キーワード | ||||||
主題Scheme | Other | |||||
主題 | Friction Force Microscope | |||||
キーワード | ||||||
主題Scheme | Other | |||||
主題 | Single Crystal Silicon | |||||
キーワード | ||||||
主題Scheme | Other | |||||
主題 | Amorphous | |||||
キーワード | ||||||
主題Scheme | Other | |||||
主題 | KOH | |||||
キーワード | ||||||
主題Scheme | Other | |||||
主題 | Cantilever for Processing | |||||
資源タイプ | ||||||
資源タイプ識別子 | http://purl.org/coar/resource_type/c_6501 | |||||
資源タイプ | journal article | |||||
著者 |
高野, 登
× 高野, 登× 大山, 達雄× 川堰, 宣隆× 森田, 昇× 山田, 茂× 芦田, 極× PARK, Jeong Woo |
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著者別名 | ||||||
姓名 | Kawasegi, Noritaka | |||||
著者別名 | ||||||
姓名 | Morita, Noboru | |||||
著者別名 | ||||||
姓名 | Yamada, Shigeru | |||||
著者別名 | ||||||
姓名 | Takano, Noboru | |||||
著者別名 | ||||||
姓名 | Oyama, Tatsuo | |||||
著者別名 | ||||||
姓名 | Ashida, Kiwamu | |||||
その他(別言語等)のタイトル | ||||||
その他のタイトル | 3D Micro-Fabrication using Combination Technique of Nano-scale Processing and Chemical Etching : 4th Report, Mechanism of Masking Effect | |||||
抄録 | ||||||
内容記述タイプ | Abstract | |||||
内容記述 | This study is intended to fabricate 3D microstructures on single crystal silicon by tribo-nano-lithography(TNL) and wet chemical etching. The processed area of single crystal silicon by diamond tip withstands etching in KOH solution, and consequently protruding microstructure can be fabricated. Transmission electron microscope(TEM), Auger electron spectroscopy(AES) and secondary ion mass spectrometry(SIMS) analyses are utilized to study the mechanism of masking effect. As a result, it can be known that crystal silicon structures are converted to amorphous silicon by TNL process, resulting in acting to the etch mask against KOH solution. Comparison of etch rate between amorphous and single crystal silicon is conducted. In addition, mechanism of protuberance, which is generated in processing under lower normal load, is studied with minute observation of processed area. | |||||
書誌情報 |
日本機械学會論文集. C編 = Transactions of the Japan Society of Mechanical Engineers. C 巻 71, 号 706, p. 2035-2040, 発行日 2005-06 |
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ISSN | ||||||
収録物識別子タイプ | ISSN | |||||
収録物識別子 | 03875024 | |||||
書誌レコードID | ||||||
収録物識別子タイプ | NCID | |||||
収録物識別子 | AN00187463 | |||||
権利 | ||||||
権利情報 | rights: 本文データは社団法人日本機械学会の許諾に基づきCiNiiから複製したものである | |||||
フォーマット | ||||||
内容記述タイプ | Other | |||||
内容記述 | application/pdf | |||||
著者版フラグ | ||||||
出版タイプ | VoR | |||||
出版タイプResource | http://purl.org/coar/version/c_970fb48d4fbd8a85 | |||||
出版者 | ||||||
出版者 | 社団法人日本機械学会 | |||||
資源タイプ(DSpace) | ||||||
内容記述タイプ | Other | |||||
内容記述 | Article |