{"created":"2023-07-25T09:08:03.204752+00:00","id":6540,"links":{},"metadata":{"_buckets":{"deposit":"2766891e-4e7c-44e7-9439-88afe0b91d26"},"_deposit":{"created_by":3,"id":"6540","owners":[3],"pid":{"revision_id":0,"type":"depid","value":"6540"},"status":"published"},"_oai":{"id":"oai:toyama.repo.nii.ac.jp:00006540","sets":["663:777:778:798:810"]},"author_link":["58922","58923","58927","22223","58924","58925"],"item_3_alternative_title_19":{"attribute_name":"その他（別言語等）のタイトル","attribute_value_mlt":[{"subitem_alternative_title":"Sticking of H_2 on Oxygen-Covered Surface of Vanadium Doped with Oxygen to Various Bulk Concentrations"}]},"item_3_biblio_info_7":{"attribute_name":"書誌情報","attribute_value_mlt":[{"bibliographicIssueDates":{"bibliographicIssueDate":"2012-03-30","bibliographicIssueDateType":"Issued"},"bibliographicPageEnd":"48","bibliographicPageStart":"33","bibliographicVolumeNumber":"31","bibliographic_titles":[{"bibliographic_title":"富山大学水素同位体科学研究センター研究報告"}]}]},"item_3_description_15":{"attribute_name":"フォーマット","attribute_value_mlt":[{"subitem_description":"application/pdf","subitem_description_type":"Other"}]},"item_3_description_4":{"attribute_name":"抄録","attribute_value_mlt":[{"subitem_description":"The sticking probability of Hz on the surface of polycrystalline V covered with oxygen was examined as a function of oxygen concentration in the bulk metal (0.4 to 3.3 at.%) at specimen temperatures from 200 to 1000℃. At all temperatures examined, the sticking probability was strongly dependent on the oxygen concentration in the bulk.\nSuch correlation between the reaction rate of Hz on the surface and the oxygen concentration in the bulk was attributed to the dependence of concentration of oxygen vacancies (holes in surface oxygen coverage) on the oxygen bulk concentration. The values of sticking probability were relatively high even at the oxygen bulk concentration of 3.3 at.%; the oxygen coverage on vanadium was rather \"holey\" even at the oxygen concentration close to the solubility limit. The activation energy for H_2 dissociation on such holes in the coverage was evaluated to be 10 kJ/mol H_2.","subitem_description_type":"Abstract"}]},"item_3_description_40":{"attribute_name":"資源タイプ(DSpace)","attribute_value_mlt":[{"subitem_description":"Article","subitem_description_type":"Other"}]},"item_3_description_6":{"attribute_name":"引用","attribute_value_mlt":[{"subitem_description":"富山大学水素同位体科学研究センター研究報告, 31巻, 2012.03.30, pp.33-48","subitem_description_type":"Other"}]},"item_3_full_name_3":{"attribute_name":"著者別名","attribute_value_mlt":[{"nameIdentifiers":[{"nameIdentifier":"22223","nameIdentifierScheme":"WEKO"},{"nameIdentifier":"9000002318187","nameIdentifierScheme":"CiNii ID","nameIdentifierURI":"http://ci.nii.ac.jp/nrid/9000002318187"},{"nameIdentifier":"80218487","nameIdentifierScheme":"e-Rad","nameIdentifierURI":"https://nrid.nii.ac.jp/nrid/1000080218487"}],"names":[{"name":"Hatano, Yuji"}]},{"nameIdentifiers":[{"nameIdentifier":"58927","nameIdentifierScheme":"WEKO"}],"names":[{"name":"Matsuyama, Masao"}]}]},"item_3_identifier_registration":{"attribute_name":"ID登録","attribute_value_mlt":[{"subitem_identifier_reg_text":"10.15099/00006534","subitem_identifier_reg_type":"JaLC"}]},"item_3_publisher_33":{"attribute_name":"出版者","attribute_value_mlt":[{"subitem_publisher":"富山大学水素同位体科学研究センター"}]},"item_3_source_id_10":{"attribute_name":"書誌レコードID","attribute_value_mlt":[{"subitem_source_identifier":"AA11841872","subitem_source_identifier_type":"NCID"}]},"item_3_source_id_8":{"attribute_name":"ISSN","attribute_value_mlt":[{"subitem_source_identifier":"13463675","subitem_source_identifier_type":"ISSN"}]},"item_3_version_type_16":{"attribute_name":"著者版フラグ","attribute_value_mlt":[{"subitem_version_resource":"http://purl.org/coar/version/c_970fb48d4fbd8a85","subitem_version_type":"VoR"}]},"item_creator":{"attribute_name":"著者","attribute_type":"creator","attribute_value_mlt":[{"creatorNames":[{"creatorName":"波多野, 雄治"}],"nameIdentifiers":[{},{},{}]},{"creatorNames":[{"creatorName":"Livshits, Alexander"}],"nameIdentifiers":[{}]},{"creatorNames":[{"creatorName":"Busnuk, Andrei"}],"nameIdentifiers":[{}]},{"creatorNames":[{"creatorName":"Alimov, Vasily"}],"nameIdentifiers":[{}]},{"creatorNames":[{"creatorName":"松山, 政夫"}],"nameIdentifiers":[{}]}]},"item_files":{"attribute_name":"ファイル情報","attribute_type":"file","attribute_value_mlt":[{"accessrole":"open_date","date":[{"dateType":"Available","dateValue":"2016-02-17"}],"displaytype":"detail","filename":"01-05_annual_report_31_page033to048.pdf","filesize":[{"value":"342.9 kB"}],"format":"application/pdf","licensetype":"license_note","mimetype":"application/pdf","url":{"label":"01-05_annual_report_31_page033to048.pdf","url":"https://toyama.repo.nii.ac.jp/record/6540/files/01-05_annual_report_31_page033to048.pdf"},"version_id":"74d7df48-0c30-480e-a72f-95d0cc3e07e4"}]},"item_keyword":{"attribute_name":"キーワード","attribute_value_mlt":[{"subitem_subject":"パナジウム","subitem_subject_scheme":"Other"},{"subitem_subject":"水素","subitem_subject_scheme":"Other"},{"subitem_subject":"の解離反応速度","subitem_subject_scheme":"Other"},{"subitem_subject":"バルク中酸素濃度依存性","subitem_subject_scheme":"Other"}]},"item_language":{"attribute_name":"言語","attribute_value_mlt":[{"subitem_language":"eng"}]},"item_resource_type":{"attribute_name":"資源タイプ","attribute_value_mlt":[{"resourcetype":"departmental bulletin paper","resourceuri":"http://purl.org/coar/resource_type/c_6501"}]},"item_title":"パナジウム表面における水素の解離反応速度のバルク中酸素濃度依存性","item_titles":{"attribute_name":"タイトル","attribute_value_mlt":[{"subitem_title":"パナジウム表面における水素の解離反応速度のバルク中酸素濃度依存性"}]},"item_type_id":"3","owner":"3","path":["810"],"pubdate":{"attribute_name":"公開日","attribute_value":"2013-06-12"},"publish_date":"2013-06-12","publish_status":"0","recid":"6540","relation_version_is_last":true,"title":["パナジウム表面における水素の解離反応速度のバルク中酸素濃度依存性"],"weko_creator_id":"3","weko_shared_id":3},"updated":"2023-07-25T14:17:36.459119+00:00"}