@article{oai:toyama.repo.nii.ac.jp:00006489,
 author = {早川, 亮 and 西野, 雅奈子 and 波多野, 雄治 and Alimov, Vasily and Livshits, Alexander I. and 池野, 進 and 中村, 幸男 and 大藪, 修義 and 渡辺, 国昭},
 journal = {富山大学水素同位体科学研究センター研究報告 = Annual Report of Hydrogen Isotope Research Center, Toyama University},
 month = {},
 note = {application/pdf, Sticking coefficient of H2, α, on a vanadium surface was measured after heat treatments in vacuum at 673, 873, 973 and 1273 K. The values of α were comparable after heat treatments at 673, 873 and 973 K, while significant reduction was observed after heat treatment at 1273 K. Arrhenius plots of α showed that the pre-exponential factor, α0, was far smaller than unity for all heat treatment conditions. This observation indicated that only minor portions of surface sites were active for hydrogen ingress. Change in chemical surface state of V by heat treatments in vacuum at 673, 873, 1073 and 1273 K was also investigated by means of X-ray photoelectron spectroscopy. The specimen surface was mainly covered by VO at 673 K and by an oxygen adlayer at 873 K. Sulfur appeared at 1073 K and completely substituted for oxygen at 1273 K. Namely, sulfur became the dominant surface impurity in the temperature region where α showed significant reduction. It was therefore concluded that the barrier effect of oxygen, including formation of a VO layer, was much weaker than that of sulfur under the present conditions., Article, 富山大学水素同位体科学研究センター研究報告 = Annual Report of Hydrogen Isotope Research Center, Toyama University 24, 9-28.(2004)},
 pages = {9--28},
 title = {バナジウムの水素吸収速度に及ぼす酸素および硫黄の影響},
 volume = {24},
 year = {2004}
}