{"created":"2023-07-25T09:02:57.564933+00:00","id":495,"links":{},"metadata":{"_buckets":{"deposit":"3a859546-0f67-4410-9668-3ec9abf7598b"},"_deposit":{"created_by":3,"id":"495","owners":[3],"pid":{"revision_id":0,"type":"depid","value":"495"},"status":"published"},"_oai":{"id":"oai:toyama.repo.nii.ac.jp:00000495","sets":["74:77:112:122"]},"author_link":["1288","1287"],"item_3_alternative_title_19":{"attribute_name":"その他（別言語等）のタイトル","attribute_value_mlt":[{"subitem_alternative_title":"The Relationship between the Resistivity of Silicon Wafer and the Optimum Current"}]},"item_3_biblio_info_7":{"attribute_name":"書誌情報","attribute_value_mlt":[{"bibliographicIssueDates":{"bibliographicIssueDate":"1997-03","bibliographicIssueDateType":"Issued"},"bibliographicPageEnd":"33","bibliographicPageStart":"23","bibliographicVolumeNumber":"50","bibliographic_titles":[{"bibliographic_title":"富山大学教育学部紀要. B, 理科系"}]}]},"item_3_description_15":{"attribute_name":"フォーマット","attribute_value_mlt":[{"subitem_description":"application/pdf","subitem_description_type":"Other"}]},"item_3_description_40":{"attribute_name":"資源タイプ(DSpace)","attribute_value_mlt":[{"subitem_description":"Article","subitem_description_type":"Other"}]},"item_3_full_name_3":{"attribute_name":"著者別名","attribute_value_mlt":[{"nameIdentifiers":[{"nameIdentifier":"1288","nameIdentifierScheme":"WEKO"}],"names":[{"name":"Yamashita, Masato"}]}]},"item_3_identifier_registration":{"attribute_name":"ID登録","attribute_value_mlt":[{"subitem_identifier_reg_text":"10.15099/00000489","subitem_identifier_reg_type":"JaLC"}]},"item_3_publisher_33":{"attribute_name":"出版者","attribute_value_mlt":[{"subitem_publisher":"富山大学教育学部"}]},"item_3_source_id_10":{"attribute_name":"書誌レコードID","attribute_value_mlt":[{"subitem_source_identifier":"AN00175704","subitem_source_identifier_type":"NCID"}]},"item_3_source_id_8":{"attribute_name":"ISSN","attribute_value_mlt":[{"subitem_source_identifier":"0285-9610","subitem_source_identifier_type":"ISSN"}]},"item_3_version_type_16":{"attribute_name":"著者版フラグ","attribute_value_mlt":[{"subitem_version_resource":"http://purl.org/coar/version/c_970fb48d4fbd8a85","subitem_version_type":"VoR"}]},"item_creator":{"attribute_name":"著者","attribute_type":"creator","attribute_value_mlt":[{"creatorNames":[{"creatorName":"山下, 正人"}],"nameIdentifiers":[{}]}]},"item_files":{"attribute_name":"ファイル情報","attribute_type":"file","attribute_value_mlt":[{"accessrole":"open_date","date":[{"dateType":"Available","dateValue":"2016-02-15"}],"displaytype":"detail","filename":"0721500003.pdf","filesize":[{"value":"593.9 kB"}],"format":"application/pdf","licensetype":"license_note","mimetype":"application/pdf","url":{"label":"0721500003.pdf","url":"https://toyama.repo.nii.ac.jp/record/495/files/0721500003.pdf"},"version_id":"d5f6dbce-f69b-4e91-9cab-26a18b93bfbf"}]},"item_keyword":{"attribute_name":"キーワード","attribute_value_mlt":[{"subitem_subject":"シリコン","subitem_subject_scheme":"Other"},{"subitem_subject":"抵抗率","subitem_subject_scheme":"Other"},{"subitem_subject":"最適電流","subitem_subject_scheme":"Other"},{"subitem_subject":"四探針法","subitem_subject_scheme":"Other"}]},"item_language":{"attribute_name":"言語","attribute_value_mlt":[{"subitem_language":"jpn"}]},"item_resource_type":{"attribute_name":"資源タイプ","attribute_value_mlt":[{"resourcetype":"departmental bulletin paper","resourceuri":"http://purl.org/coar/resource_type/c_6501"}]},"item_title":"シリコンウェハの抵抗率と最適電流","item_titles":{"attribute_name":"タイトル","attribute_value_mlt":[{"subitem_title":"シリコンウェハの抵抗率と最適電流"}]},"item_type_id":"3","owner":"3","path":["122"],"pubdate":{"attribute_name":"公開日","attribute_value":"2009-03-10"},"publish_date":"2009-03-10","publish_status":"0","recid":"495","relation_version_is_last":true,"title":["シリコンウェハの抵抗率と最適電流"],"weko_creator_id":"3","weko_shared_id":3},"updated":"2023-07-25T15:32:06.484924+00:00"}