{"created":"2023-07-25T09:06:17.522013+00:00","id":4521,"links":{},"metadata":{"_buckets":{"deposit":"4ad4bc4b-2e9f-4de9-8bcb-ac287c64599a"},"_deposit":{"created_by":3,"id":"4521","owners":[3],"pid":{"revision_id":0,"type":"depid","value":"4521"},"status":"published"},"_oai":{"id":"oai:toyama.repo.nii.ac.jp:00004521","sets":["496:556:559:560:607"]},"author_link":["58149","58148","58150","58147"],"item_3_alternative_title_19":{"attribute_name":"その他（別言語等）のタイトル","attribute_value_mlt":[{"subitem_alternative_title":"Crystal Growth of Phosphorus-Doped Triglycine Sulfate and its Ferroelectric Properties"}]},"item_3_biblio_info_7":{"attribute_name":"書誌情報","attribute_value_mlt":[{"bibliographicIssueDates":{"bibliographicIssueDate":"1996-02","bibliographicIssueDateType":"Issued"},"bibliographicPageEnd":"58","bibliographicPageStart":"53","bibliographicVolumeNumber":"47","bibliographic_titles":[{"bibliographic_title":"富山大学工学部紀要"}]}]},"item_3_description_4":{"attribute_name":"抄録","attribute_value_mlt":[{"subitem_description":"Single crystals of phosphorus-doped triglycine sulfate (TGSP) have been grown from aqueous solution by slow-cooling method. The concentration of phosphorus in the crystal is several hundreds times lower than in the solution. The general crystal form is affected by the doping.\nThe (010) surfaces develop notably in the crystal grown from highly concentrated solution. The ferroelectric properties were investigated by the examination of P-E hysteresis loop. Although the spontaneous polarization P, is hardly affected by the doping, the coercive field E_c becomes considerably in tenser with doping, especially in the (010) growth region. In this region, PO_4^<3-> tetrahedron substituted for SO_4^<2-> tetrahedron will reduce the rate of crystal growth and impede the polarization reversal.","subitem_description_type":"Abstract"},{"subitem_description":"リンをドープした硫酸グリシン(TGSP)単結晶を水溶液徐冷法によって作製した。結晶中のリン濃度は，溶液中の濃度の数百分の一である。結晶形はドーピングによって変わる。高濃度の溶液から作製した結晶では(010)面が特に発達する。P-E履歴曲線を観察することによって，強誘電的特性を調べた。自発分極P_sはドーピングによってほとんど影響を受けないが，抗電場E_cはドーピングによって，特に(010)成長領域で目立って大きくなる。この領域ではSO_4^<2->四面体と置き換わったPO_4^<3->四面体が，結晶成長速度を低下させ，分極反転を阻害しているのであろう。","subitem_description_type":"Abstract"}]},"item_3_description_40":{"attribute_name":"資源タイプ(DSpace)","attribute_value_mlt":[{"subitem_description":"Article","subitem_description_type":"Other"}]},"item_3_description_6":{"attribute_name":"引用","attribute_value_mlt":[{"subitem_description":"富山大学工学部紀要，47, Page 53-58","subitem_description_type":"Other"}]},"item_3_full_name_3":{"attribute_name":"著者別名","attribute_value_mlt":[{"nameIdentifiers":[{"nameIdentifier":"58149","nameIdentifierScheme":"WEKO"}],"names":[{"name":"Yoshio, Masakazu"}]},{"nameIdentifiers":[{"nameIdentifier":"58150","nameIdentifierScheme":"WEKO"}],"names":[{"name":"Nakatani, Noriyuki"}]}]},"item_3_identifier_registration":{"attribute_name":"ID登録","attribute_value_mlt":[{"subitem_identifier_reg_text":"10.15099/00004515","subitem_identifier_reg_type":"JaLC"}]},"item_3_publisher_33":{"attribute_name":"出版者","attribute_value_mlt":[{"subitem_publisher":"富山大学工学部"}]},"item_3_source_id_10":{"attribute_name":"書誌レコードID","attribute_value_mlt":[{"subitem_source_identifier":"AN00175872","subitem_source_identifier_type":"NCID"}]},"item_3_source_id_8":{"attribute_name":"ISSN","attribute_value_mlt":[{"subitem_source_identifier":"03871339","subitem_source_identifier_type":"ISSN"}]},"item_3_subject_22":{"attribute_name":"国立国会図書館分類","attribute_value_mlt":[{"subitem_subject":"ZM2","subitem_subject_scheme":"NDLC"}]},"item_3_version_type_16":{"attribute_name":"著者版フラグ","attribute_value_mlt":[{"subitem_version_resource":"http://purl.org/coar/version/c_970fb48d4fbd8a85","subitem_version_type":"VoR"}]},"item_creator":{"attribute_name":"著者","attribute_type":"creator","attribute_value_mlt":[{"creatorNames":[{"creatorName":"吉尾, 雅一"}],"nameIdentifiers":[{}]},{"creatorNames":[{"creatorName":"中谷, 訓幸"}],"nameIdentifiers":[{}]}]},"item_files":{"attribute_name":"ファイル情報","attribute_type":"file","attribute_value_mlt":[{"accessrole":"open_date","date":[{"dateType":"Available","dateValue":"2016-02-16"}],"displaytype":"detail","filename":"Kokiyo_47_01_Page053to058.pdf","filesize":[{"value":"4.5 MB"}],"format":"application/pdf","licensetype":"license_note","mimetype":"application/pdf","url":{"label":"Kokiyo_47_01_Page053to058.pdf","url":"https://toyama.repo.nii.ac.jp/record/4521/files/Kokiyo_47_01_Page053to058.pdf"},"version_id":"e1407929-a102-4828-a588-7faf2f997cdb"}]},"item_keyword":{"attribute_name":"キーワード","attribute_value_mlt":[{"subitem_subject":"リン","subitem_subject_scheme":"Other"},{"subitem_subject":"硫酸グリシン単結晶","subitem_subject_scheme":"Other"},{"subitem_subject":"強誘電的特性","subitem_subject_scheme":"Other"},{"subitem_subject":"硫酸グリシン単結晶の作製","subitem_subject_scheme":"Other"},{"subitem_subject":"強誘電体","subitem_subject_scheme":"Other"},{"subitem_subject":"TGS単結晶","subitem_subject_scheme":"Other"},{"subitem_subject":"リンをドープ","subitem_subject_scheme":"Other"},{"subitem_subject":"単結晶","subitem_subject_scheme":"Other"},{"subitem_subject":"強誘電特性","subitem_subject_scheme":"Other"}]},"item_language":{"attribute_name":"言語","attribute_value_mlt":[{"subitem_language":"jpn"}]},"item_resource_type":{"attribute_name":"資源タイプ","attribute_value_mlt":[{"resourcetype":"departmental bulletin paper","resourceuri":"http://purl.org/coar/resource_type/c_6501"}]},"item_title":"リンをドープした硫酸グリシン単結晶の作製とその強誘電的特性","item_titles":{"attribute_name":"タイトル","attribute_value_mlt":[{"subitem_title":"リンをドープした硫酸グリシン単結晶の作製とその強誘電的特性"}]},"item_type_id":"3","owner":"3","path":["607"],"pubdate":{"attribute_name":"公開日","attribute_value":"2012-10-15"},"publish_date":"2012-10-15","publish_status":"0","recid":"4521","relation_version_is_last":true,"title":["リンをドープした硫酸グリシン単結晶の作製とその強誘電的特性"],"weko_creator_id":"3","weko_shared_id":-1},"updated":"2023-07-25T15:07:43.730018+00:00"}