{"created":"2023-07-25T09:06:01.460122+00:00","id":4186,"links":{},"metadata":{"_buckets":{"deposit":"25468d64-0692-4dee-891a-0be5aeb64323"},"_deposit":{"created_by":3,"id":"4186","owners":[3],"pid":{"revision_id":0,"type":"depid","value":"4186"},"status":"published"},"_oai":{"id":"oai:toyama.repo.nii.ac.jp:00004186","sets":["496:556:559:560:587"]},"author_link":["56433","56432","56431","56429","56430","56428"],"item_3_alternative_title_19":{"attribute_name":"その他（別言語等）のタイトル","attribute_value_mlt":[{"subitem_alternative_title":"Crystal Growth and Electrical Properties of GaN"}]},"item_3_biblio_info_7":{"attribute_name":"書誌情報","attribute_value_mlt":[{"bibliographicIssueDates":{"bibliographicIssueDate":"1976-03","bibliographicIssueDateType":"Issued"},"bibliographicPageEnd":"47","bibliographicPageStart":"43","bibliographicVolumeNumber":"27","bibliographic_titles":[{"bibliographic_title":"富山大学工学部紀要"}]}]},"item_3_description_4":{"attribute_name":"抄録","attribute_value_mlt":[{"subitem_description":"The epitaxial growth of GaN by employing a technique previously reported of vapor phase reaction between GaCl and NH_3 in an Ar carrier gas ambient is described. Single crystal layers 10--100 μm thick and -- 0. 5 cm^2 in area, were obtained on (0001) oriented sapphire substrate at deposition temperature about 1045 ℃\nThe best undoped layers obtained had carner concentration of 2--7 X 10^<18> cm^<-3> and electron mobility about 90 cm^2/V sec.","subitem_description_type":"Abstract"},{"subitem_description":"III-V化合物GaN（窒化ガリウム）は，直接選移形のエネルギーバンド構造を有し，その結晶構造はウルツ鉱形で六方晶系に属する。\nその禁制帯幅は室温で約3.4eVであり，光学的基礎吸収端が3650Åの近紫外部にある。\nこの大きな禁制帯幅のため，種々の応用が考えられている。\n既に今日までに，不純物（主としてII-B族元素Zn，Mg等）を添加し，絶縁体としたGaNと，undopedのn形GaNによるi-n形ダイオードで，青色・緑色・黄色・赤色の発光が報告されている。\n特にZnを添加したものからは最高パワー効率0.1%が得られている。\nしかし，現在までに得られたundoped GaNは常にn形を示し，その自由電子濃度も10^17cm^{-3}以上と高く，又p形結晶はまだ確認されていない。\nドナーの原因としては，窒素の空格子点が考えられている。\n我々は，高効率青色発光素予の材料としてGaNを取り上げ，その結晶成長を試みている。\n本論文には，我々の行ったundoped GaNの作成とその電気的性質について報告する。","subitem_description_type":"Abstract"}]},"item_3_description_40":{"attribute_name":"資源タイプ(DSpace)","attribute_value_mlt":[{"subitem_description":"Article","subitem_description_type":"Other"}]},"item_3_description_6":{"attribute_name":"引用","attribute_value_mlt":[{"subitem_description":"富山大学工学部紀要，27","subitem_description_type":"Other"}]},"item_3_full_name_3":{"attribute_name":"著者別名","attribute_value_mlt":[{"nameIdentifiers":[{"nameIdentifier":"56431","nameIdentifierScheme":"WEKO"}],"names":[{"name":"TACHI, Shin-ichi"}]},{"nameIdentifiers":[{"nameIdentifier":"56432","nameIdentifierScheme":"WEKO"}],"names":[{"name":"TATSUYAMA, Chiei"}]},{"nameIdentifiers":[{"nameIdentifier":"56433","nameIdentifierScheme":"WEKO"}],"names":[{"name":"ICHIMURA, Shoji"}]}]},"item_3_identifier_registration":{"attribute_name":"ID登録","attribute_value_mlt":[{"subitem_identifier_reg_text":"10.15099/00004180","subitem_identifier_reg_type":"JaLC"}]},"item_3_publisher_33":{"attribute_name":"出版者","attribute_value_mlt":[{"subitem_publisher":"富山大学工学部"}]},"item_3_source_id_10":{"attribute_name":"書誌レコードID","attribute_value_mlt":[{"subitem_source_identifier":"AN00175872","subitem_source_identifier_type":"NCID"}]},"item_3_source_id_8":{"attribute_name":"ISSN","attribute_value_mlt":[{"subitem_source_identifier":"03871339","subitem_source_identifier_type":"ISSN"}]},"item_3_subject_22":{"attribute_name":"国立国会図書館分類","attribute_value_mlt":[{"subitem_subject":"ZM2","subitem_subject_scheme":"NDLC"}]},"item_3_version_type_16":{"attribute_name":"著者版フラグ","attribute_value_mlt":[{"subitem_version_resource":"http://purl.org/coar/version/c_970fb48d4fbd8a85","subitem_version_type":"VoR"}]},"item_creator":{"attribute_name":"著者","attribute_type":"creator","attribute_value_mlt":[{"creatorNames":[{"creatorName":"田地, 新一"}],"nameIdentifiers":[{}]},{"creatorNames":[{"creatorName":"龍山, 智栄"}],"nameIdentifiers":[{}]},{"creatorNames":[{"creatorName":"市村, 昭二"}],"nameIdentifiers":[{}]}]},"item_files":{"attribute_name":"ファイル情報","attribute_type":"file","attribute_value_mlt":[{"accessrole":"open_date","date":[{"dateType":"Available","dateValue":"2016-02-16"}],"displaytype":"detail","filename":"Kokiyo_27_01_Page043to047.pdf","filesize":[{"value":"3.6 MB"}],"format":"application/pdf","licensetype":"license_note","mimetype":"application/pdf","url":{"label":"Kokiyo_27_01_Page043to047.pdf","url":"https://toyama.repo.nii.ac.jp/record/4186/files/Kokiyo_27_01_Page043to047.pdf"},"version_id":"0c4faf3e-7eb5-4e88-8824-c53a1631038f"}]},"item_keyword":{"attribute_name":"キーワード","attribute_value_mlt":[{"subitem_subject":"GaN","subitem_subject_scheme":"Other"},{"subitem_subject":"結晶成長","subitem_subject_scheme":"Other"},{"subitem_subject":"電気的性質","subitem_subject_scheme":"Other"},{"subitem_subject":"高効率青色発光素子","subitem_subject_scheme":"Other"},{"subitem_subject":"undoped GaN","subitem_subject_scheme":"Other"}]},"item_language":{"attribute_name":"言語","attribute_value_mlt":[{"subitem_language":"jpn"}]},"item_resource_type":{"attribute_name":"資源タイプ","attribute_value_mlt":[{"resourcetype":"departmental bulletin paper","resourceuri":"http://purl.org/coar/resource_type/c_6501"}]},"item_title":"GaNの結晶成長とその電気的性質","item_titles":{"attribute_name":"タイトル","attribute_value_mlt":[{"subitem_title":"GaNの結晶成長とその電気的性質"}]},"item_type_id":"3","owner":"3","path":["587"],"pubdate":{"attribute_name":"公開日","attribute_value":"2012-09-28"},"publish_date":"2012-09-28","publish_status":"0","recid":"4186","relation_version_is_last":true,"title":["GaNの結晶成長とその電気的性質"],"weko_creator_id":"3","weko_shared_id":-1},"updated":"2023-07-25T15:11:29.259001+00:00"}