{"created":"2023-07-25T09:05:55.694807+00:00","id":4072,"links":{},"metadata":{"_buckets":{"deposit":"dd3ba8b2-830a-4147-ae3e-adc2cd96ee2a"},"_deposit":{"created_by":3,"id":"4072","owners":[3],"pid":{"revision_id":0,"type":"depid","value":"4072"},"status":"published"},"_oai":{"id":"oai:toyama.repo.nii.ac.jp:00004072","sets":["496:556:559:560:582"]},"author_link":["56009","56010","56012","56011"],"item_3_alternative_title_19":{"attribute_name":"その他（別言語等）のタイトル","attribute_value_mlt":[{"subitem_alternative_title":"The relationship between growing rate and etchant density, and flowing rate when etching Ge single crystal"}]},"item_3_biblio_info_7":{"attribute_name":"書誌情報","attribute_value_mlt":[{"bibliographicIssueDates":{"bibliographicIssueDate":"1971-03","bibliographicIssueDateType":"Issued"},"bibliographicPageEnd":"15","bibliographicPageStart":"9","bibliographicVolumeNumber":"22","bibliographic_titles":[{"bibliographic_title":"富山大学工学部紀要"}]}]},"item_3_description_4":{"attribute_name":"抄録","attribute_value_mlt":[{"subitem_description":"Growing process of etching has scarecely been clear. Etching of Ge single crystals which orientations are (100), (111) with Superoxol is observed continuously in order to investigate the efect of Condensation and flow of etchant for surface etch pits. The results are folowing.\n(1) There is a remarkable relationship betwen growing rate of pits and condenastion on flow of etchant. (2) In growing proces, there are special patterns in varience of length of botom plane and side plane, and growing rate of botom plane, and they are effected on another. (3) Growing proces of Surface etchpit is divided into four terms, initial, stable, side plane interruption, and bottom plane interruption.","subitem_description_type":"Abstract"},{"subitem_description":"エッチングは光像法による結晶方位の決定，結晶格子欠陥の観察などのために簡便な方法として，よく使用されているが，その際生ずるエッチピットの成長過程および成長形態については，いまだ明らかにされていない。従来の研究においては，エッチャント濃度と特定結晶面のエッチング速度，結晶方位によるエッチング速度分布およびこれらの結果からの幾何学的にエッチピットの形状を解析しようとするものが主であった。本研究は，そのうちの前者について，単一結晶面ではなく，ピット全体の成長変化がどのようになるかについてが特徴である。\nエッチピットには前処理時の機械的研摩に原因するといわれている表層ピットと結晶欠陥に原因するといわれている深層ピットとがあるが，本研究においては(100)，(111)面のGe単結晶についてSuperoxolに，よるエッチングを行い，対象を表層ピットに限定して連続的に観察をし \n(1) エッチングにおけるエッチャント流量濃度の影響 \n(2) エッチピットの成長過程 \nについて考察することにつとめた。その結果は本稿にのべるように，かなり著しい因果関係を明らかにすることができた。","subitem_description_type":"Abstract"}]},"item_3_description_40":{"attribute_name":"資源タイプ(DSpace)","attribute_value_mlt":[{"subitem_description":"Article","subitem_description_type":"Other"}]},"item_3_description_6":{"attribute_name":"引用","attribute_value_mlt":[{"subitem_description":"富山大学工学部紀要，22","subitem_description_type":"Other"}]},"item_3_full_name_3":{"attribute_name":"著者別名","attribute_value_mlt":[{"nameIdentifiers":[{"nameIdentifier":"56011","nameIdentifierScheme":"WEKO"}],"names":[{"name":"YAGI, Hiroshi"}]},{"nameIdentifiers":[{"nameIdentifier":"56012","nameIdentifierScheme":"WEKO"}],"names":[{"name":"OKAZAKI, Takeshi"}]}]},"item_3_identifier_registration":{"attribute_name":"ID登録","attribute_value_mlt":[{"subitem_identifier_reg_text":"10.15099/00004066","subitem_identifier_reg_type":"JaLC"}]},"item_3_publisher_33":{"attribute_name":"出版者","attribute_value_mlt":[{"subitem_publisher":"富山大学工学部"}]},"item_3_source_id_10":{"attribute_name":"書誌レコードID","attribute_value_mlt":[{"subitem_source_identifier":"AN00175872","subitem_source_identifier_type":"NCID"}]},"item_3_source_id_8":{"attribute_name":"ISSN","attribute_value_mlt":[{"subitem_source_identifier":"03871339","subitem_source_identifier_type":"ISSN"}]},"item_3_subject_22":{"attribute_name":"国立国会図書館分類","attribute_value_mlt":[{"subitem_subject":"ZM2","subitem_subject_scheme":"NDLC"}]},"item_3_version_type_16":{"attribute_name":"著者版フラグ","attribute_value_mlt":[{"subitem_version_resource":"http://purl.org/coar/version/c_970fb48d4fbd8a85","subitem_version_type":"VoR"}]},"item_creator":{"attribute_name":"著者","attribute_type":"creator","attribute_value_mlt":[{"creatorNames":[{"creatorName":"八木, 寛"}],"nameIdentifiers":[{}]},{"creatorNames":[{"creatorName":"岡崎, 武志"}],"nameIdentifiers":[{}]}]},"item_files":{"attribute_name":"ファイル情報","attribute_type":"file","attribute_value_mlt":[{"accessrole":"open_date","date":[{"dateType":"Available","dateValue":"2016-02-16"}],"displaytype":"detail","filename":"Kokiyo_22_01_Page009to015.pdf","filesize":[{"value":"984.8 kB"}],"format":"application/pdf","licensetype":"license_note","mimetype":"application/pdf","url":{"label":"Kokiyo_22_01_Page009to015.pdf","url":"https://toyama.repo.nii.ac.jp/record/4072/files/Kokiyo_22_01_Page009to015.pdf"},"version_id":"14bf172b-8ad4-4cb3-9eab-b838540552a9"}]},"item_keyword":{"attribute_name":"キーワード","attribute_value_mlt":[{"subitem_subject":"Ge単結晶","subitem_subject_scheme":"Other"},{"subitem_subject":"Etching","subitem_subject_scheme":"Other"},{"subitem_subject":"エッチング","subitem_subject_scheme":"Other"},{"subitem_subject":"結晶","subitem_subject_scheme":"Other"}]},"item_language":{"attribute_name":"言語","attribute_value_mlt":[{"subitem_language":"jpn"}]},"item_resource_type":{"attribute_name":"資源タイプ","attribute_value_mlt":[{"resourcetype":"departmental bulletin paper","resourceuri":"http://purl.org/coar/resource_type/c_6501"}]},"item_title":"Ge単結晶のEtchingにおけるEtchpitsの成長変化とEtchant濃度,流量の関係について","item_titles":{"attribute_name":"タイトル","attribute_value_mlt":[{"subitem_title":"Ge単結晶のEtchingにおけるEtchpitsの成長変化とEtchant濃度,流量の関係について"}]},"item_type_id":"3","owner":"3","path":["582"],"pubdate":{"attribute_name":"公開日","attribute_value":"2012-08-20"},"publish_date":"2012-08-20","publish_status":"0","recid":"4072","relation_version_is_last":true,"title":["Ge単結晶のEtchingにおけるEtchpitsの成長変化とEtchant濃度,流量の関係について"],"weko_creator_id":"3","weko_shared_id":-1},"updated":"2023-07-25T15:12:22.100285+00:00"}