@article{oai:toyama.repo.nii.ac.jp:00003108,
 author = {高野, 登 and 大山, 達雄 and 芦田, 極 and 谷口, 淳 and 宮本, 岩男 and 川堰, 宣隆 and 森田, 昇 and 山田, 茂},
 issue = {705},
 journal = {日本機械学會論文集. C編 = Transactions of the Japan Society of Mechanical Engineers. C},
 month = {May},
 note = {application/pdf, A simple process to fabricate 3 D microstructures on single crystal silicon is presented in this study. The area irradiated by focused ion beam(FIB) can be selectively etched in HF solution. Etching characteristics of irradiated area are studied. The etch rate of irradiated area increases with increasing dose over 3.4×10^5 C/cm^2. In addition, it can be also controlled by accelerate voltage. Subsequently, it is etched by KOH solution in order to evaluate the mechanism of this phenomenon. Dependence of surface roughness on dot pitch is evaluated. Finally, 3 D microstructures can be fabricated based on these results, which indicates a possibility of industrial application as a novel 3D micro-fabrication process., Article},
 pages = {1754--1759},
 title = {ナノスケール機械加工と化学エッチングを併用した3次元極微細構造形成 : 第3報,エッチング加速作用のFIB照射条件依存性と3次元微細構造形成への応用(機械要素,潤滑,工作,生産管理など)},
 volume = {71},
 year = {2005}
}