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XPS信号強度を用いたBi系超伝導薄膜の単原始層制御
https://doi.org/10.15099/00004432
https://doi.org/10.15099/00004432e922ad96-0a85-4e19-8d27-2e778925e6f8
名前 / ファイル | ライセンス | アクション |
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Kokiyo_43_01_Page019to022.pdf (1.9 MB)
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Item type | 紀要論文 / Departmental Bulletin Paper(1) | |||||
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公開日 | 2012-10-11 | |||||
タイトル | ||||||
タイトル | XPS信号強度を用いたBi系超伝導薄膜の単原始層制御 | |||||
言語 | ||||||
言語 | jpn | |||||
キーワード | ||||||
主題Scheme | Other | |||||
主題 | XPS信号強度 | |||||
キーワード | ||||||
主題Scheme | Other | |||||
主題 | Bi系超伝導薄膜 | |||||
キーワード | ||||||
主題Scheme | Other | |||||
主題 | 単原始層制御 | |||||
キーワード | ||||||
主題Scheme | Other | |||||
主題 | MBE | |||||
キーワード | ||||||
主題Scheme | Other | |||||
主題 | 分子線エピタキシ | |||||
キーワード | ||||||
主題Scheme | Other | |||||
主題 | エピタキシャル成長 | |||||
キーワード | ||||||
主題Scheme | Other | |||||
主題 | 層状結晶構造 | |||||
キーワード | ||||||
主題Scheme | Other | |||||
主題 | 単原子層積層制御 | |||||
キーワード | ||||||
主題Scheme | Other | |||||
主題 | XPS信号強度結果 | |||||
キーワード | ||||||
主題Scheme | Other | |||||
主題 | 分子線エピタキシー | |||||
資源タイプ | ||||||
資源タイプ識別子 | http://purl.org/coar/resource_type/c_6501 | |||||
資源タイプ | departmental bulletin paper | |||||
ID登録 | ||||||
ID登録 | 10.15099/00004432 | |||||
ID登録タイプ | JaLC | |||||
著者 |
鈴木, 浩司
× 鈴木, 浩司× 岸田, 裕司× 柴田, 幹× 女川, 博義× 宮下, 和雄 |
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著者別名 | ||||||
姓名 | Suzuki, Kouji | |||||
著者別名 | ||||||
姓名 | Kishida, Yuji | |||||
著者別名 | ||||||
姓名 | Shibata, Miki | |||||
著者別名 | ||||||
姓名 | Onnagawa, Hiroyoshi | |||||
著者別名 | ||||||
姓名 | Miyashita, Kazuo | |||||
その他(別言語等)のタイトル | ||||||
その他のタイトル | Atomic Layer Control of the Bi Based Superconducting Thin Film by MBE Method with Monitoring the XPS Signal | |||||
抄録 | ||||||
内容記述タイプ | Abstract | |||||
内容記述 | Atomic layer control of each component material is indispensable for the low temperature epitaxial growth of Bi based superconducting thin film on a single crystal MgO substrate by sequential multilayer deposition method with MBE apparatus. However, it is not always easy to control the number of atoms equal to be a single atomic layer by the conventional control of evaporation time. In this experiment, we tried to find the optimum substrate temperature for the deposition of only one atomic layer. We have obtained the substrate temperature for the deposition of Bi mono-layer on the MgO substrate. However, we have not found the good condition for deposition of Sr mono-layer. |
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抄録 | ||||||
内容記述タイプ | Abstract | |||||
内容記述 | MBE装置を用いてMgO単結晶基板上にBi系超伝導薄膜を低温でエピタキシャル成長させるには,各ターゲット材料の単原子層制御は必要不可欠な技術である。しかし,従来のような蒸着源シャッタの開放時間による単原子層制御は,単原子層分だけの原子数を制御することは必ずしも容易ではない。本実験では,単原子だけが堆積する最適な基板温度を見いだすことを試みた。BiについてはMgO基板上に単原子層だけ付着する基板温度を見いだした。しかし,Srの単原子層だけが堆積する良い条件を見いだせなかった。 | |||||
引用 | ||||||
内容記述タイプ | Other | |||||
内容記述 | 富山大学工学部紀要,43, Page 19-22 | |||||
書誌情報 |
富山大学工学部紀要 巻 43, p. 19-22, 発行日 1992-03 |
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ISSN | ||||||
収録物識別子タイプ | ISSN | |||||
収録物識別子 | 03871339 | |||||
書誌レコードID | ||||||
収録物識別子タイプ | NCID | |||||
収録物識別子 | AN00175872 | |||||
著者版フラグ | ||||||
出版タイプ | VoR | |||||
出版タイプResource | http://purl.org/coar/version/c_970fb48d4fbd8a85 | |||||
国立国会図書館分類 | ||||||
主題Scheme | NDLC | |||||
主題 | ZM2 | |||||
出版者 | ||||||
出版者 | 富山大学工学部 | |||||
資源タイプ(DSpace) | ||||||
内容記述タイプ | Other | |||||
内容記述 | Article |